Radiation effects and annealing of power MOSFET for space applications

LIU Gang; YU Xuefeng; REN Diyuan; NIU Zhenhong; GAO Song

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Radiation effects and annealing of power MOSFET for space applications

更新时间：2023-03-30

- Radiation effects and annealing of power MOSFET for space applications
- Journal of Radiation Research and Radiation Processing Vol. 24, Issue 4, Pages: 201-204(2006)
- 作者机构：
  
  1.中国科学院新疆理化技术研究所　乌鲁木齐　830011
  2.中国科学院研究生院　北京100049
- 作者简介：
- 基金信息：
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LIU Gang, YU Xuefeng, REN Diyuan, et al. Radiation effects and annealing of power MOSFET for space applications. [J]. Journal of Radiation Research and Radiation Processing 24(4):201-204(2006)
DOI：

LIU Gang, YU Xuefeng, REN Diyuan, et al. Radiation effects and annealing of power MOSFET for space applications. [J]. Journal of Radiation Research and Radiation Processing 24(4):201-204(2006) DOI：

摘要

为给金属氧化物半导体场效应功率管（Power MOSFET）在航天系统中的应用提供辐照数据基础和依据。用,60,Co源对将应用于空间系统的两种Power MOSFET进行了不同总剂量的辐照实验。从微观氧化物陷阱电荷和界面态的辐射感生角度，分析了Power MOSFET器件在,60,Co γ射线辐射下的总剂量和剂量率效应以及辐照后70℃退火特性。试验表明与N沟道Power MOSFET相比，P沟道Power MOSFET可能更适合空间应用。

Abstract

Two kinds of power MOSFET were irradiated by ,60,Co γ-rays in order to investigate their resistance to cosmic rays. The total dose radiation responses and voltage-current characteristics after 70℃ annealing were studied based on the changes of oxide charges and interface states induced by the irradiation. The results show that the P channel devices are more radiation resistant than the N channel devices.

关键词

金属氧化物半导体场效应功率管辐射响应退火特性

Keywords

Power MOSFETIrradiation responseAnnealing characteristics

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