Effects of N<sup>+</sup> ion implantation on lipid peroxidation in soybean seedling

Guo Jinhua; Wang Haobo; Xie Chuanxiao; Wu Lijun; Yu Zengliang

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Effects of N⁺ ion implantation on lipid peroxidation in soybean seedling

更新时间：2023-03-30

- Effects of N⁺ ion implantation on lipid peroxidation in soybean seedling
- Journal of Radiation Research and Radiation Processing Vol. 21, Issue 4, Pages: 243-246(2003)
- 作者机构：
  
  1.中国科学院等离子体物理研究所离子束生物工程学重点实验室　合肥　230031
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Guo Jinhua, Wang Haobo, Xie Chuanxiao, et al. Effects of N⁺ ion implantation on lipid peroxidation in soybean seedling. [J]. Journal of Radiation Research and Radiation Processing 21(4):243-246(2003)
DOI：

Guo Jinhua, Wang Haobo, Xie Chuanxiao, et al. Effects of N⁺ ion implantation on lipid peroxidation in soybean seedling. [J]. Journal of Radiation Research and Radiation Processing 21(4):243-246(2003) DOI：

摘要

用N,+,注入丰豆101的种子，采收子叶伸展后24h和96h的幼苗做为试验材料，研究N,+,注入对其幼苗过氧化物酶（POD）、过氧化氢酶(CAT)和超氧化物歧化酶(SOD)活性以及氧化产物丙二醛(MDA)的含量、电解质外渗率的影响。结果表明，在25kev能量下，当N,+,注量在6.5×10,16,—7.8×10,16,N,+,/cm,2,时，幼苗的SOD和CAT活性最高。而POD活性在小于5.2×10,16,N,+,/cm,2,低剂量下，活性较恒定，在大于5.2×10 ,16,N,+,/cm,2,中高剂量下，活性逐渐增大。此外， N,+,注入还可降低幼苗子叶中的MDA积累量和电解质外渗率，而且在6.5×10 ,16,N,+,/cm,2,剂量下，幼苗中的MDA含量和电解质外渗率最低。揭示了一定剂量N,+,注入大豆种子可削弱幼苗脂质过氧化作用以及提高其抗寒性的关系。

Abstract

Soybean seeds of Fengdou-101 were implanted by N,+, ions. Cotyledon samples (24h, 96h) were collected randomly during cotyledons to primary leaves seedlings stage for testing. The effects of N,+, ion (E=25kev) implantation (0—10.4×10,16,N,+,/cm,2,) on the activities of peroxidase(POD), catalase(CAT) and superoxides dismutase(SOD), content of malondiadehyde(MDA) and leakage of electrolyte were investigated in soybean seedlings. The results show that the SOD and CAT were the highest with doses from 6.5×10,16, to 7.8×10,16,N,+,/cm,2,. The POD activity kept relatively stable level when the dose was lower than 5.2×10,16,N,+,/cm,2, whereas the POD activity increased gradually with increasing doses above the threshold of 5.2×10,16,N,+,/cm,2,. The N,+, ion implantation of soybean seeds reduced the accumulation of MDA and electrolytic leakage of cotyledons, and the lowest MDA content and the electrolyte leakage was found at 6.5×10,16,N,+,/cm,2,. It indicates that N,+, ion implantation may reduce lipid peroxidation and improve the ability of cold acclimation in soybean seedlings.

关键词

氮离子注入大豆幼苗脂质过氧化酶活性

Keywords

N+ ion implantationSoybean seedlingLipid peroxidationEnzyme activity

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Effects of N+ ion implantation on lipid peroxidation in soybean seedling

DOI：

摘要

Abstract

关键词

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Effects of N⁺ ion implantation on lipid peroxidation in soybean seedling