Effects of N+ implantation on polysaccharide and osmosis stress resistance of liquorice
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Effects of N+ implantation on polysaccharide and osmosis stress resistance of liquorice
Journal of Radiation Research and Radiation ProcessingVol. 25, Issue 5, Pages: 271-274(2007)
作者机构:
1.苏州大学城市科学学院 苏州 215123
2.中国科学院等离子体物理研究所 中国科学院离子束生物工程学重点实验室 合肥 230031
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WEI Shenglin, WU Lijun, YU Zengliang. Effects of N+ implantation on polysaccharide and osmosis stress resistance of liquorice. [J]. Journal of Radiation Research and Radiation Processing 25(5):271-274(2007)
DOI:
WEI Shenglin, WU Lijun, YU Zengliang. Effects of N+ implantation on polysaccharide and osmosis stress resistance of liquorice. [J]. Journal of Radiation Research and Radiation Processing 25(5):271-274(2007)DOI:
Effects of N+ implantation on polysaccharide and osmosis stress resistance of liquorice
In order to study the effects of N,+, implantation on osmosis stress resistance of plant, the experiment was taken with liquorice as plant model and 15% PEG as the osmosis stress agent. The results showed that the stem height growth of liquorice increased by 40.2% compared with controls (,p,<,0.01 and internal polysaccharide in leaves increased by 84.8% (,p,<,0.01 after 20keV nitrogen ions implanted. The stem height growth showed evidently the positive correlation with the in internal polysaccharide in leaves under osmosis stress (,r,=0.7166,p,<,0.01) The selected N,+, implantation parameters may be useful to increase osmosis stress resistance cultivation of liquorice and to make it mutatedwith ions beam implanation.