Numerical evaluation on the feasibility of dose rate switching technique

Xiuyu ZHANG; Xiaolong FENG; Hongliang LI; Yu SONG; Gang DAI

doi:10.11889/j.1000-3436.2017.rrj.35.010701

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Numerical evaluation on the feasibility of dose rate switching technique

RADIATION INTERDISCIPLINARY RESEARCH | 更新时间：2021-12-10

- Numerical evaluation on the feasibility of dose rate switching technique
- Journal of Radiation Research and Radiation Processing Vol. 35, Issue 1, Pages: 10701(2017)
- 作者机构：
  
  1.中国工程物理研究院电子工程研究所绵阳 621000
  2.中国工程物理研究院微系统与太赫兹研究中心成都 610200
- 作者简介：
- 基金信息：
  
  cience Challenge Project(JCKY2016212A503);National Natural Science Foundation of China(SFC Grant No.11404300);President Funding of Chinese Academy of Engineering Physics(President Funding of CAEP No.2014-1-100)
- DOI：10.11889/j.1000-3436.2017.rrj.35.010701
  CLC：
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Xiuyu ZHANG, Xiaolong FENG, Hongliang LI, et al. Numerical evaluation on the feasibility of dose rate switching technique. [J]. Journal of Radiation Research and Radiation Processing 35(1):10701(2017)
DOI：

Xiuyu ZHANG, Xiaolong FENG, Hongliang LI, et al. Numerical evaluation on the feasibility of dose rate switching technique. [J]. Journal of Radiation Research and Radiation Processing 35(1):10701(2017) DOI： 10.11889/j.1000-3436.2017.rrj.35.010701.

摘要

为进行剂量率切换辐照加速方法适用性的数值评估，基于定量损伤物理模型和剂量率切换加速方法实验测试条件，以氢浓度、初始缺陷浓度和温度为变量，对金属绝缘层半导体（Metal insulator semiconductor，MIS）结构进行了系统的数值模拟。结果表明，剂量率切换辐照加速方法的适用性对双极器件氧化层内的氢浓度及缺陷浓度有很强的依赖。因此，剂量率切换加速方法的实验可能对部分器件和电路不再适用。

Abstract

For the sake of evaluating the feasibility of dose rate switching technique, systematic numerical simulations on the MIS (Metal insulator semiconductor) structure was done based on a quantitative physical model and the experimental conditions of dose rate switching technique, regarding hydrogen concentration, initial defect concentrations and temperature as variables. It turned out that the feasibility of the dose rate switching technique is strongly dependent on the hydrogen concentration and initial defects concentrations in the oxide layer of the bipolar devices. Therefore, the experiments of dose rate switching technique have possible failures on part of devices and circuits.

关键词

剂量率切换加速方法数值模拟氢浓度初始缺陷浓度

Keywords

Dose rate switchingAcceleration methodsNumerical simulationHydrogen concentrationInitial defect concentrations

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