Influence of total ionizing dose effects on domestic SiGe BiCMOS under different bias conditions

WANG Libin; WANG Xin; WU Xue; LI Xiaolong; LIU Mohan; LU Wu

doi:10.11889/j.1000-3436.2020.rrj.38.050701

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Influence of total ionizing dose effects on domestic SiGe BiCMOS under different bias conditions

RADIATION INTERDISCIPLINARY RESEARCH | 更新时间：2025-02-28

- Influence of total ionizing dose effects on domestic SiGe BiCMOS under different bias conditions
- “According to the latest report, domestically produced 0.35 micron SiGe BiCMOS process devices exhibit excellent resistance to total ionizing dose effects under high dose rate irradiation, providing a new solution for electronic device applications in radiation environments.”
- Journal of Radiation Research and Radiation Processing Vol. 38, Issue 5, Pages: 60-66(2020)
- 作者机构：
  
  1.新疆大学物理科学与技术学院乌鲁木齐 830046
  2.中国科学院新疆理化技术研究所中国科学院特殊环境功能材料与器件重点实验室乌鲁木齐 830011
  3.新疆电子信息材料与器件重点实验室乌鲁木齐 830011
  4.模拟集成电路重点实验室重庆 400060
- 作者简介：
  
  WANG Libin (male) was born in June 1992, and obtained his bachelor degree from YanTai University in 2015. Now he is a graduate student at Xinjiang University, majoring in nuclear technology and applications
  LU Wu, professor, doctoral supervisor, E-mail: luwu@ms.xjb.ac.cn
- 基金信息：
  
  Science and Technology on Analog Integrated Circuit Laboratory(JCKY2019210C055);the Tianchi Doctoral Plan of Autonomous Region (under Grant No [2018]111), and West Light Foundation of the Chinese Academy of Sciences(新科证字[2018]111号)
- DOI：10.11889/j.1000-3436.2020.rrj.38.050701
  CLC： O77+4
- Received：09 March 2020，
  
  Revised：28 April 2020，
  
  Accepted：2020-04-28，
  
  Published：20 October 2020
- 稿件说明：
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王利斌,王信,吴雪等.偏置条件对国产SiGe BiCMOS器件总电离辐射效应的影响[J].辐射研究与辐射工艺学报,2020,38(05):60-66.

WANG Libin,WANG Xin,WU Xue,et al.Influence of total ionizing dose effects on domestic SiGe BiCMOS under different bias conditions[J].Journal of Radiation Research and Radiation Processing,2020,38(05):60-66.
王利斌,王信,吴雪等.偏置条件对国产SiGe BiCMOS器件总电离辐射效应的影响[J].辐射研究与辐射工艺学报,2020,38(05):60-66. DOI： 10.11889/j.1000-3436.2020.rrj.38.050701.

WANG Libin,WANG Xin,WU Xue,et al.Influence of total ionizing dose effects on domestic SiGe BiCMOS under different bias conditions[J].Journal of Radiation Research and Radiation Processing,2020,38(05):60-66. DOI： 10.11889/j.1000-3436.2020.rrj.38.050701.

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Influence of total ionizing dose effects on domestic SiGe BiCMOS under different bias conditions

DOI：10.11889/j.1000-3436.2020.rrj.38.050701