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Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor
RADIATION INTERDISCIPLINARY RESEARCH | 更新时间：2025-02-28
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    • Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor

    • “In the field of aerospace grade power integrated circuits, experts have studied high-voltage LDMOS anti single particle effect reinforcement technology to provide a solution for improving the radiation resistance performance of devices.”
    • Journal of Radiation Research and Radiation Processing   Vol. 40, Issue 5, Pages: 82-88(2022)

    • DOI：10.11889/j.1000-3436.2022-0035    

      CLC： TN402

    • Received：23 March 2022，

      Revised：06 May 2022，

      Accepted：2022-05-06，

      Published：20 October 2022

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  • CHU Fei,CHEN Hongzhuan,PENG Ling,et al.Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor[J].Journal of Radiation Research and Radiation Processing,2022,40(05):82-88. DOI： 10.11889/j.1000-3436.2022-0035.

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