WANG Dan, REN Shaoxiong, LI Weifeng, et al. Plant growth of E-beam irradiated or ion implanted seeds of ornamental Celosia[J]. Journal of Radiation Research and Radiation Processing, 2006,24(3):188-192.
WANG Dan, REN Shaoxiong, LI Weifeng, et al. Plant growth of E-beam irradiated or ion implanted seeds of ornamental Celosia[J]. Journal of Radiation Research and Radiation Processing, 2006,24(3):188-192.DOI:
Celosia seeds were irradiated by 3MeV electron beams or implanted with 30keV N,+, or H,+, ions, The results showed that the two kinds of treatments could inhibit growth and development of the plants and induce variation of the flower. The variation rate was between 0.5%—2%. LD,50, of the seeds irradiation by the E-beams was estimated at about 1.2kGy. LD,50, of the seed ion implantation varied with the ion. LD,50, of H,+, ion implantation was 1.6×10,17, ions/cm,2, and LD,50, of N,+, ion implantation was less than 1.6×10,16, ions /cm,2,. Suitable treatments of the seeds were 1.5kGy E-beam irradiation, or implantation of1.6×10,16, N,+, /cm,2,. The seeds were not sensitive to higher dose irradiation or ion implantation. And it seems that Celosia seeds have strong radiation resistance.
关键词
鸡冠花电子束离子注入干种子生长发育
Keywords
CelosiaElectron beamIon implantationDry seedsGrowth and development