The effects of short-term irradiation with low dose rate γ and β rays on the electromagnetic parameters of InSb Hall transducer at different working states, such as input resistance, output resistance, magneto-resistance and Hall sensitivity etc, were systemically studied. The results indicated that the action of γ or β rays with ionization and displacement effect on Hall devices could result in the complicated changes of electromagnetic parameters. These changes didn’t disappear rapidly after irradiation stopped. It reflected the radiation damage could not be restored through annealing courses at room temperature. When the devices were driven by constant current and not in any magnetic field, their input resistance linearly increased with irradiation time. When the devices were driven by constant current and in certain magnetic field, their input resistance and Hall voltage could increase along with γ irradiation, but the extent was less and the direct proportional relation with irradiation time didn’t exist on account of the action of magnetic field. When the devices were not at working state and not in any magnetic field, their input and output resistance all increased with irradiation, but their magneto-resistance and Hall sensitivity might increase or decrease. All these results could give some helps for the relevant studies of radiation defense at some extent.