In order to study the effects of N,+, implantation on osmosis stress resistance of plant, the experiment was taken with liquorice as plant model and 15% PEG as the osmosis stress agent. The results showed that the stem height growth of liquorice increased by 40.2% compared with controls (,p,<,0.01 and internal polysaccharide in leaves increased by 84.8% (,p,<,0.01 after 20keV nitrogen ions implanted. The stem height growth showed evidently the positive correlation with the in internal polysaccharide in leaves under osmosis stress (,r,=0.7166,p,<,0.01) The selected N,+, implantation parameters may be useful to increase osmosis stress resistance cultivation of liquorice and to make it mutatedwith ions beam implanation.