应用12MeV电子束辐照效应制造硅P<sup>+</sup>NN<sup>+</sup>高频整流二极管

杭德生

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应用12MeV电子束辐照效应制造硅P⁺NN⁺高频整流二极管

更新时间：2023-04-23

- 应用12MeV电子束辐照效应制造硅P⁺NN⁺高频整流二极管
- THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P⁺NN⁺ HIGH FREQUENCY RECTIFYING DIODES
- 辐射研究与辐射工艺学报 1995年13卷第1期页码：1-5
- 作者机构：
  
  1.南京大学物理系，南京　210024
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杭德生. 应用12MeV电子束辐照效应制造硅P⁺NN⁺高频整流二极管[J]. 辐射研究与辐射工艺学报, 1995,13(1):1-5.

Hang Desheng. THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P⁺NN⁺ HIGH FREQUENCY RECTIFYING DIODES[J]. Journal of Radiation Research and Radiation Processing, 1995,13(1):1-5.
杭德生. 应用12MeV电子束辐照效应制造硅P⁺NN⁺高频整流二极管[J]. 辐射研究与辐射工艺学报, 1995,13(1):1-5. DOI：

Hang Desheng. THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P⁺NN⁺ HIGH FREQUENCY RECTIFYING DIODES[J]. Journal of Radiation Research and Radiation Processing, 1995,13(1):1-5. DOI：

摘要

采用12 MeV电子束辐照效应将P,+,NN,+,普通整流二极管改制成高频整流二极管，与传统掺金工艺相比，少子寿命控制精确；t,rr,和V,F,的一致性和重复性好；高温性能明显改善；产品合格率提高30%以上，工艺简单易行。

Abstract

The 12 Mev electron irradiation effect has been used to ture the commoon P,+,NN,+, diodes into high frequency rectifying diodes. Compared with the traditional gold-doping technique, this method can control the life of the minority carriers more precisely. The T,rr, and V,f, of the diodes can be better consistent and repeatable. And the high temperature performance is obviously improved. The rate of the qualified diodes is increased by a factor more than 30%.

关键词

电子辐照高频整流二极管τ-少子寿命trr-反向恢复时间VF-正向压降

Keywords

Electron irradiationHigh frequency rectifier diodesτ-the life time of minority carriersTrr-reverse recovery timeVf-fwdvoltage

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应用12MeV电子束辐照效应制造硅P+NN+高频整流二极管

THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P+NN+ HIGH FREQUENCY RECTIFYING DIODES

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摘要

Abstract

关键词

Keywords

references

应用12MeV电子束辐照效应制造硅P⁺NN⁺高频整流二极管

THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P⁺NN⁺ HIGH FREQUENCY RECTIFYING DIODES