XING Kefei, WANG Yueke, PAN Huafeng. Radiation effect test on ADC/DAC and high density memory devices with 60Co γ-rays[J]. Journal of Radiation Research and Radiation Processing, 2006,24(4):253-256.
XING Kefei, WANG Yueke, PAN Huafeng. Radiation effect test on ADC/DAC and high density memory devices with 60Co γ-rays[J]. Journal of Radiation Research and Radiation Processing, 2006,24(4):253-256.DOI:
A test platform was constructed for ,60,Co γ-ray irradiation experiment of microelectronics, with the aid of computer and a FPGA module. The tested sample devices included analog-to-digital converter AD10465, digital-to-analog converter AD9857, high density flash memory MEF64M16 and anti-fused PROM XQR17V16, which are used in signal processing module in spaceborne systems. Evaluations were made on their ability of resisting the total dose based on the proper function criterion of the devices. The results showed that AD10465 and AD9857 ran properly after 1.59kGy(Si) irradiation, but errors were found when MEF64M16 and XQR17V16’s total ionizing doze is 0.13kGy(Si) and 0.99kGy(Si), respectively.