In-situ irradiation and simulation of real-time current response in bipolar junction transistors under medium dose-rate γ radiation
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In-situ irradiation and simulation of real-time current response in bipolar junction transistors under medium dose-rate γ radiation
Journal of Radiation Research and Radiation ProcessingPages: 1-8(2026)
作者机构:
1.中国科学院大学电子电气与通信工程学院 北京 100049
2.中国科学院新疆理化技术研究所特殊环境条件功能材料与器件重点实验室 乌鲁木齐 830011
作者简介:
SUN Jiacheng (male) was born in December 2001, and obtained a bachelor's degree from Wuhan University in 2022, and is currently a master's candidate at the University of Chinese Academy of Sciences (UCAS)
GUO Qi, professor, E-mail: guoqi@ms.xjb.ac.cn
基金信息:
Tianshan Talents Program of Xinjiang Uygur Autonomous Region(2024TSYCCX0085);Natural Science Foundation of Xinjiang Uygur Autonomous Region(2023D01A03);Tianshan Talent Training Program Grant(2023TSYCCX0106;2023TSYCTD0010);Key Research and Development Program of Xinjiang Grant(2023B01008)
SUN Jiacheng, LI Xialong, YANG Jicong, et al. In-situ irradiation and simulation of real-time current response in bipolar junction transistors under medium dose-rate γ radiation[J]. Journal of Radiation Research and Radiation Processing, XXXX, XX(XX): XXXXXX.
SUN Jiacheng, LI Xialong, YANG Jicong, et al. In-situ irradiation and simulation of real-time current response in bipolar junction transistors under medium dose-rate γ radiation[J]. Journal of Radiation Research and Radiation Processing, XXXX, XX(XX): XXXXXX.DOI: 10.11889/j.1000-3436.2026-0021. CSTR: 32195.14.j.JRRRP.1000-3436.2026-0021.
In-situ irradiation and simulation of real-time current response in bipolar junction transistors under medium dose-rate γ radiation
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