Proton radiation effects on GaN HEMT devices

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更新时间：2026-09-21

- Proton radiation effects on GaN HEMT devices
- Journal of Radiation Research and Radiation Processing Pages: 1-9(2026)
- 作者机构：
  
  1.新疆极端环境电子学重点实验室，特殊环境条件功能材料与器件重点实验室，中国科学院新疆理化技术研究所乌鲁木齐 830000
  2.中国科学院大学北京 101408
- 作者简介：
  
  XIE Yongzhi (male) was born in December 2000. Now he is a graduate student at University of Chinese Academy of Sciences, major in integrated circuit engineering
  CUI Jiangwei, doctoral degree, professor, E-mail: cuijw@ms.xjb.ac.cn
- 基金信息：
  
  the Open Project of Key Laboratory of Xinjiang Uygur Autonomous Region(2025D04006);Key Research and Development Program of Xinjiang Grant(2023B01008);the Youth Innovation Promotion Association CAS
- DOI：10.11889/j.1000-3436.2026-0032
  CLC： TN386
- Received：02 March 2026，
  
  Revised：2026-03-13，
  
  Accepted：13 March 2026，
  
  Online First：21 September 2026，
- 稿件说明：
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XIE Yongzhi, CUI Jiangwei, LI Xiaolong, et al. Proton radiation effects on GaN HEMT devices[J]. Journal of Radiation Research and Radiation Processing, XXXX, XX(XX): XXXXXX.
DOI：

XIE Yongzhi, CUI Jiangwei, LI Xiaolong, et al. Proton radiation effects on GaN HEMT devices[J]. Journal of Radiation Research and Radiation Processing, XXXX, XX(XX): XXXXXX. DOI： 10.11889/j.1000-3436.2026-0032. CSTR： 32195.14.j.JRRRP.1000-3436.2026-0032.

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