ELECTRON BEAM IRRADIATION OF SEMICONDUCTOR DEVICES

Wang Deren

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ELECTRON BEAM IRRADIATION OF SEMICONDUCTOR DEVICES

更新时间：2023-04-23

- ELECTRON BEAM IRRADIATION OF SEMICONDUCTOR DEVICES
- Journal of Radiation Research and Radiation Processing Vol. 2, Issue 3, Pages: 55-59(1984)
- 作者机构：
  
  1.上海化学工业研究院
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Wang Deren. ELECTRON BEAM IRRADIATION OF SEMICONDUCTOR DEVICES. [J]. Journal of Radiation Research and Radiation Processing 2(3):55-59(1984)
DOI：

Wang Deren. ELECTRON BEAM IRRADIATION OF SEMICONDUCTOR DEVICES. [J]. Journal of Radiation Research and Radiation Processing 2(3):55-59(1984) DOI：

摘要

用电子束辐照半导体器件使器件内产生复合中心，从而达到控制器件的某些参数。本文就辐照技术，辐照产生缺陷的性质，对器件辐照效果，辐照能力和成本予以叙述。与扩金工艺比较，电子辐照是一种产率高，成本低，控制性好的新工艺。

Abstract

The electron beam irradiation produces recombined centers in semiconductor, which may control some parameters of the device. In this paper the irradiation technique, defect character and radiation effect in the devices, irradiation ability and cost were described. Compared with diffused gold, the electron beam irradiation possesses larger productivity, lower cost and controllability of device parameter

关键词

电子辐照缺陷器件参数辐照能力成本

Keywords

Electron beam irratiationDefectDevice parameterIrradiation abilityCost.

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