DETERMINATION OF PROJECTION RANGE OF 7 MeV/u 16O6+ IONS IN CR-39 SOLID STATE TRACK DETECTOR
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DETERMINATION OF PROJECTION RANGE OF 7 MeV/u 16O6+ IONS IN CR-39 SOLID STATE TRACK DETECTOR
Journal of Radiation Research and Radiation ProcessingVol. 12, Issue 3, Pages: 151-154,145(1994)
作者机构:
1.中科院近代物理研究所,兰州 730000
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Wang Guiling, Wei Zengquan, Li Wenjian, et al. DETERMINATION OF PROJECTION RANGE OF 7 MeV/u 16O6+ IONS IN CR-39 SOLID STATE TRACK DETECTOR. [J]. Journal of Radiation Research and Radiation Processing 12(3):151-154,145(1994)
DOI:
Wang Guiling, Wei Zengquan, Li Wenjian, et al. DETERMINATION OF PROJECTION RANGE OF 7 MeV/u 16O6+ IONS IN CR-39 SOLID STATE TRACK DETECTOR. [J]. Journal of Radiation Research and Radiation Processing 12(3):151-154,145(1994)DOI:
DETERMINATION OF PROJECTION RANGE OF 7 MeV/u 16O6+ IONS IN CR-39 SOLID STATE TRACK DETECTOR
Projection range of 7 MeV/u ,16,O,6+, ions implanted into CR-39 solid state track detector which is the material equivalent to biosamples is determined in the paper. Using measured data in the experiments, the projection range of the heavy ions in CR-39 (e. i. ion implantation depth) is analysed and discussed according to both etching rate ratio and statistics rule of residual range distribution. Results from the both ways are 32.5±6.2 µm and 30.5±6 µm respectively which are in agreement with each other well. The methods in the paper possess practical value to research on locating induced mutation in biosamples implanted by heavy ions.
关键词
CR-39固体径迹探测器投影射程面蚀刻速率径向蚀刻速率轴向蚀刻速率
Keywords
CR-39 solid state track detectorProjection rangeSurface etching rateRadial etching rateAxial direction etching rate