THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P<sup>+</sup>NN<sup>+</sup> HIGH FREQUENCY RECTIFYING DIODES

Hang Desheng

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THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P⁺NN⁺ HIGH FREQUENCY RECTIFYING DIODES

更新时间：2023-04-23

- THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P⁺NN⁺ HIGH FREQUENCY RECTIFYING DIODES
- Journal of Radiation Research and Radiation Processing Vol. 13, Issue 1, Pages: 1-5(1995)
- 作者机构：
  
  1.南京大学物理系，南京　210024
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Hang Desheng. THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P⁺NN⁺ HIGH FREQUENCY RECTIFYING DIODES. [J]. Journal of Radiation Research and Radiation Processing 13(1):1-5(1995)
DOI：

Hang Desheng. THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P⁺NN⁺ HIGH FREQUENCY RECTIFYING DIODES. [J]. Journal of Radiation Research and Radiation Processing 13(1):1-5(1995) DOI：

摘要

采用12 MeV电子束辐照效应将P,+,NN,+,普通整流二极管改制成高频整流二极管，与传统掺金工艺相比，少子寿命控制精确；t,rr,和V,F,的一致性和重复性好；高温性能明显改善；产品合格率提高30%以上，工艺简单易行。

Abstract

The 12 Mev electron irradiation effect has been used to ture the commoon P,+,NN,+, diodes into high frequency rectifying diodes. Compared with the traditional gold-doping technique, this method can control the life of the minority carriers more precisely. The T,rr, and V,f, of the diodes can be better consistent and repeatable. And the high temperature performance is obviously improved. The rate of the qualified diodes is increased by a factor more than 30%.

关键词

电子辐照高频整流二极管τ-少子寿命trr-反向恢复时间VF-正向压降

Keywords

Electron irradiationHigh frequency rectifier diodesτ-the life time of minority carriersTrr-reverse recovery timeVf-fwdvoltage

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THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P+NN+ HIGH FREQUENCY RECTIFYING DIODES

DOI：

摘要

Abstract

关键词

Keywords

references

THE APPLICATION OF 12 MeV ELECTRON IRRADIATION EFFECT TO THE PRODUCTION OF SILICON P⁺NN⁺ HIGH FREQUENCY RECTIFYING DIODES