COMPARISON OF X-AND γ-RADIATION DAMAGE ON OPERATIONAL AMPLIFIERS

Chen Panxun

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COMPARISON OF X-AND γ-RADIATION DAMAGE ON OPERATIONAL AMPLIFIERS

更新时间：2023-04-23

- COMPARISON OF X-AND γ-RADIATION DAMAGE ON OPERATIONAL AMPLIFIERS
- Journal of Radiation Research and Radiation Processing Vol. 15, Issue 2, Pages: 80-85(1997)
- 作者机构：
  
  1.中国工程物理研究院应用电子学研究所　成都　610003
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Chen Panxun. COMPARISON OF X-AND γ-RADIATION DAMAGE ON OPERATIONAL AMPLIFIERS. [J]. Journal of Radiation Research and Radiation Processing 15(2):80-85(1997)
DOI：

Chen Panxun. COMPARISON OF X-AND γ-RADIATION DAMAGE ON OPERATIONAL AMPLIFIERS. [J]. Journal of Radiation Research and Radiation Processing 15(2):80-85(1997) DOI：

摘要

比较了运算放大器在X和γ辐射环境下性能的变化，并对X射线对运算放大器产生的剂量增强效应作了研究。实验测量X射线对几种典型运放的相对剂量增强系数（RDEF）的范围为3.4～12.3。SiO,2,/Si界面产生的俘获空穴电荷和界面态是运算放大器在X和γ辐射环境下的主要失效模式。

Abstract

Character change of operational amplifiers was compared in X-and γ-radiation enviroments. Dose enhancement effect of X — and γ-radiation was studied to operational amplifiers. Relative dose enhancement factors (RDEF) measured are about 3.4~12.4 in the experiment. SiO,2,/Si interface trapped hole charges and interfacestates are main failure model of operationalamplifiers in X-and γ-radiation enviroments.

关键词

运算放大器X射线γ射线辐射损伤剂量增强效应

Keywords

Operational amplifierX-rayγ-rayRadiation damageDose enhancement effect

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