THE ELECTRON IRRADIATION EFFECTS IN DIFFERENT STRUCTURES OF DIODES

Li Quanfen; Wang Jiaxu

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THE ELECTRON IRRADIATION EFFECTS IN DIFFERENT STRUCTURES OF DIODES

更新时间：2023-04-23

- THE ELECTRON IRRADIATION EFFECTS IN DIFFERENT STRUCTURES OF DIODES
- Journal of Radiation Research and Radiation Processing Vol. 11, Issue 2, Pages: 126-128(1993)
- 作者机构：
  
  1.清华大学，北京　100084
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Li Quanfen, Wang Jiaxu. THE ELECTRON IRRADIATION EFFECTS IN DIFFERENT STRUCTURES OF DIODES. [J]. Journal of Radiation Research and Radiation Processing 11(2):126-128(1993)
DOI：

Li Quanfen, Wang Jiaxu. THE ELECTRON IRRADIATION EFFECTS IN DIFFERENT STRUCTURES OF DIODES. [J]. Journal of Radiation Research and Radiation Processing 11(2):126-128(1993) DOI：

摘要

叙述了不同结构二极管对电子辐照产生的效应和不同辐照方法产生的结果。据此可考虑选择相应的加工工艺。

Abstract

This paper describes the different electron irradiation effects in different structures of diodes and the different results produced by different irradiation ways. From this work, we can know how to choose proper manufacture arts and comprehensive factors according to the structures of diodes and the irradiation conditions.

关键词

反向恢复时间辐射损伤系数正向压降最高反向工作电压

Keywords

Reverse recovery timeRadiation damage coefficientForward voltage dropMaximu reverse operating voltage

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Technical Physics Institute of Heilongiang Province Academy.

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